Yuan Lu

A simple four-port parasitic deembedding methodology for high-frequency scattering parameter and noise characterization of SiGe HBTs

Qingqing Liang, John D. Cressler, Guofu Niu et al. · IEEE Transactions on Microwave Theory and Techniques · 2003 · 78 citations

Engineering, Radio Frequency, High-frequency Scattering Parameter +20

Cryogenic Operation of Third-Generation, 200-GHz Peak-<tex>$f_T$</tex>, Silicon–Germanium Heterojunction Bipolar Transistors

B. Banerjee, S. Venkataraman, Yuan Lu et al. · IEEE Transactions on Electron Devices · 2005 · 47 citations

Electrical Engineering, Semiconductor Device, Cryogenic Operation +13

A 1.8-3.1 dB Noise Figure (3-10 GHz) SiGe HBT LNA For UWB Applications

Yuan Lu, R. Krithivasan, W.-M.L. Kuo et al. · 2006 · 34 citations

Sige Hbt Lna, Electrical Engineering, Sige Lna +13

Damage mechanisms in impact-ionization-induced mixed-mode reliability degradation of SiGe HBTs

Chendong Zhu, Qingqing Liang, R.A. Al-Huq et al. · IEEE Transactions on Device and Materials Reliability · 2005 · 29 citations

Electrical Engineering, Mixed-mode Stress, Engineering +13