Concepedia

C. Stanis

CS

Statistics

Publications

25

Citations

747

H-Index

17

Active since

1990

Affiliations

IBM Research - Thomas J. Watson Research Center(Current)

IBM (United States)

The University of Texas at Austin

C. Stanis is an author at IBM Research - Thomas J. Watson Research Center specializing in materials science, engineering, and electrical engineering.

Publications per year

1990–2002

25

Publications

25

High-mobility modulation-doped SiGe-channel p-MOSFETs

S. Verdonckt-Vandebroek, E.F. Crabbé, B.S. Meyerson et al. · IEEE Electron Device Letters · 1991 · 121 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Roughness analysis of Si/SiGe heterostructures

R. M. Feenstra, M. A. Lutz, Frank Stern et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1995 · 58 citations

Natural Sciences, Materials Engineering, Materials Science +17

Identification of perimeter depletion and emitter plug effects in deep-submicrometer, shallow-junction polysilicon emitter bipolar transistors

Joachim N. Burghartz, J.Y.-C. Sun, C. Stanis et al. · IEEE Transactions on Electron Devices · 1992 · 53 citations

Engineering, Electrical Engineering, Materials Science +17

Profile leverage in self-aligned epitaxial Si or SiGe base bipolar technology

J.H. Comfort, G.L. Patton, John D. Cressler et al. · 2002 · 52 citations

Engineering, Electrical Engineering, Microelectronics +16

The thermal stability of SiGe films deposited by ultrahigh-vacuum chemical vapor deposition

S. R. Stiffler, J.H. Comfort, C. Stanis et al. · Journal of Applied Physics · 1991 · 46 citations

Natural Sciences, Materials Engineering, Materials Science +17

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