IEEE Electron Device Letters · 1991 · 121 citations · 5 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCarrier TransportDopingIii-v SemiconductorsIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsSilicon MaterialsChannel DopingChannel Doping EffectsHigh-electron-mobility TransistorsModulation DopingN-type DopingPolysiliconThreshold VoltageThreshold Voltage Control
A novel subsurface SiGe-channel p-MOSFET is demonstrated in which modulation doping is used to control the threshold voltage without degrading the channel mobility. A novel device design consisting of a graded SiGe channel, an n/sup +/ polysilicon gate, and p/sup +/ modulation doping is used. A boron-doped layer is located underneath the graded and undoped SiGe channel to minimize process sensitivity and maximize transconductance. Low-field hole mobilities of 220 cm/sup 2//V-s at 300 K and 980 cm/sup 2//V-s at 82 K were achieved in functional submicrometer p-MOSFETs.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
5
Submicrometer-channel CMOS for low-temperature operation
J.Y.-C. Sun, Yuan Taur, R.H. Dennard et al. · IEEE Transactions on Electron Devices · 1987 · 127 citations
Engineering, Computer Engineering, Electrical Engineering +17
Graded SiGe-Channel Modulation-Doped p-Mosfets
S. Verdonckt-Vandebroek, E.F. Crabbé, B.S. Meyerson et al. · 1991 · 17 citations