A.C. Megdanis - Concepedia

Author

A.C. Megdanis

IBM Research - Thomas J. Watson Research Center

Also Known As

A. C. Megdanis, A. Megdanis, A.C. Megdanis

Publications

501

Citations

H-Index

Concepts

All Affiliations

IBM Research - Thomas J. Watson Research Center IBM (United States)

About

A.C. Megdanis is an author at IBM Research - Thomas J. Watson Research Center specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	12	13	466
2	Electrical Engineering	12	13	466
3	Applied Physics	11	12	445
4	Computer Engineering	1	1	21
5	Materials Engineering	1	1	11

A.C. Megdanis

Publications

466

Citations

H-Index

Page 1

	Year	Citations
High-mobility modulation-doped SiGe-channel p-MOSFETs S. Verdonckt-Vandebroek, E.F. Crabbé, B.S. Meyerson, IEEE Electron Device Letters Low-power ElectronicsGraded Sige ChannelElectrical EngineeringSemiconductor TechnologyEngineering	1991	121
73-GHz self-aligned SiGe-base bipolar transistors with phosphorus-doped polysilicon emitters E.F. Crabbé, J.H. Comfort, W. Lee, IEEE Electron Device Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	1992	65
A variable-stress shallow trench isolation (STL) technology with diffused sidewall doping for submicron CMOS B. Davari, Charles W. Koburger, T. Furukawa, EngineeringVlsi DesignSubmicron CmosIntegrated CircuitsInterconnect (Integrated Circuits)	2003	57
A novel high-performance lateral bipolar on SOI G. Shahidi, D.D. Tang, B. Davari, Electrical EngineeringElectronic DevicesEngineeringVlsi DesignCollector Resistances	2002	48
113-GHz f/sub T/ graded-base SiGe HBT's E.F. Crabbé, B.S. Meyerson, D.L. Harame, IEEE Transactions on Electron Devices Degrees C-10-s AnnealElectrical EngineeringSemiconductor DeviceEngineeringRf Semiconductor	1993	24
55 Ghz Polysilicon-Emitter Graded Sige-Base Pnp Transistors D.L. Harame, B.S. Meyerson, E.F. Crabbé, Electrical EngineeringAc CharacteristicsEngineeringRf SemiconductorNanoelectronics	1991	23
113-GHz f<sub>T</sub> graded-base SiGe HBTs E.F. Crabbé, J.H. Comfort, G.L. Patton, SemiconductorsElectrical EngineeringElectronic DevicesEngineeringRf Semiconductor	1993	23
Novel in-situ doped polysilicon emitter process with buried diffusion source (BDS) Joachim N. Burghartz, A.C. Megdanis, John D. Cressler, IEEE Electron Device Letters Narrow Emitter FormationElectrical EngineeringElectronic DevicesEngineeringHigh-speed Electronics	1991	22
Digital FIR filters for high speed PRML disk read channels D.J. Pearson, Scott Reynolds, A.C. Megdanis, IEEE Journal of Solid-State Circuits Electrical EngineeringCustom Circuit DesignEngineeringFilter (Signal Processing)Pr-iv Channel Equalization	1995	21
SiGe-base PNP transistors fabricated with n-type UHV/CVD LTE in a `No Dt' process D.L. Harame, J.M.C. Stork, B.S. Meyerson, EngineeringOptoelectronic DevicesSige-base Pnp TransistorsSemiconductor DeviceSemiconductors	1990	19

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