A.C. Megdanis

High-mobility modulation-doped SiGe-channel p-MOSFETs

S. Verdonckt-Vandebroek, E.F. Crabbé, B.S. Meyerson et al. · IEEE Electron Device Letters · 1991 · 121 citations · Full text

Low-power Electronics, Graded Sige Channel, Electrical Engineering +10

73-GHz self-aligned SiGe-base bipolar transistors with phosphorus-doped polysilicon emitters

E.F. Crabbé, J.H. Comfort, W. Lee et al. · IEEE Electron Device Letters · 1992 · 65 citations · Full text

Semiconductors, Semiconductor Technology, Electrical Engineering +11

A variable-stress shallow trench isolation (STL) technology with diffused sidewall doping for submicron CMOS

B. Davari, Charles W. Koburger, T. Furukawa et al. · 2003 · 57 citations

Engineering, Vlsi Design, Submicron Cmos +17

A novel high-performance lateral bipolar on SOI

G. Shahidi, D.D. Tang, B. Davari et al. · 2002 · 48 citations

Electrical Engineering, Electronic Devices, Engineering +12

113-GHz f/sub T/ graded-base SiGe HBT's

E.F. Crabbé, B.S. Meyerson, D.L. Harame et al. · IEEE Transactions on Electron Devices · 1993 · 24 citations

Degrees C-10-s Anneal, Electrical Engineering, Semiconductor Device +14