A novel high-performance lateral bipolar on SOI

Abstract

A novel lateral bipolar structure on SOI (silicon-on-insulator) is described. This device has a thin double-diffused base and a narrow emitter width, determined by the SOI thickness. It has minimal parasitic junction capacitance, as well as minimal emitter and collector resistances. Excellent device characteristics and an f/sub T/ of about 20 GHz were demonstrated.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>