P.A. McFarland

A room temperature 0.1 μm CMOS on SOI

G. Shahidi, Clint Anderson, B.A. Chappell et al. · IEEE Transactions on Electron Devices · 1994 · 80 citations

Low-power Electronics, Advanced 0.1, Electrical Engineering +10

Thermal stability of TiSi2 on mono- and polycrystalline silicon

C. Y. Wong, L. K. Wang, P.A. McFarland et al. · Journal of Applied Physics · 1986 · 59 citations

Materials Science, Materials Engineering, Engineering +11

A novel high-performance lateral bipolar on SOI

G. Shahidi, D.D. Tang, B. Davari et al. · 2002 · 48 citations

Electrical Engineering, Electronic Devices, Engineering +12

A high performance 90nm SOI technology with 0.992 μm/sup 2/ 6T-SRAM cell

Mukesh Khare, S.H. Ku, R. A. Donaton et al. · 2003 · 43 citations

Low-power Electronics, Materials Science, Electrical Engineering +14

CMOS scaling in the 0.1-µm, 1.X-volt regime for high-performance applications

G. Shahidi, J.D. Warnock, J.H. Comfort et al. · IBM Journal of Research and Development · 1995 · 43 citations

Low-power Electronics, Electrical Engineering, Cmos Scaling +14