Charles W. Koburger

Integration of chemical-mechanical polishing into CMOS integrated circuit manufacturing

Howard Landis, Peter J. Burke, W. Cote et al. · Thin Solid Films · 1992 · 104 citations

Engineering, Manufacturing Engineering, Materials Science +12

Ultra-thin-body and BOX (UTBB) fully depleted (FD) device integration for 22nm node and beyond

Qijiong Liu, A. Yagishita, N. Loubet et al. · 2010 · 80 citations

Engineering, Electrical Engineering, Microelectronics +10

Composite silicide gate electrodes—Interconnections for VLSI device technologies

H.J. Geipel, Ning Hsieh, M.H. Ishaq et al. · IEEE Transactions on Electron Devices · 1980 · 62 citations

Engineering, Electrical Engineering, Materials Science +17

A variable-stress shallow trench isolation (STL) technology with diffused sidewall doping for submicron CMOS

B. Davari, Charles W. Koburger, T. Furukawa et al. · 2003 · 57 citations

Engineering, Computer Engineering, Electrical Engineering +17

A new planarization technique, using a combination of RIE and chemical mechanical polish (CMP)

B. Davarik, Charles W. Koburger, R. Schulz et al. · 2003 · 55 citations

Engineering, Electrical Engineering, Materials Science +17