Concepedia

Performance, reliability, radiation effects, and aging issues in microelectronics – From atomic-scale physics to engineering-level modeling

Sokrates T. Pantelides, Leonidas Tsetseris, Matthew J. Beck, Sergey N. Rashkeev, G. Hadjisavvas, Iskander G. Batyrev, Blair Tuttle, A. G. Marinopoulos, X. J. Zhou, Daniel M. Fleetwood,

Solid-State Electronics · 2010 · 27 citations · 55 references

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References

55

Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing

D.K. Schroder, Jeff A. Babcock · Journal of Applied Physics · 2003 · 1K citations

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A comprehensive model of PMOS NBTI degradation

Md Ashraful Alam, Souvik Mahapatra · Microelectronics Reliability · 2004 · 762 citations

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Negative bias stress of MOS devices at high electric fields and degradation of MNOS devices

Kjell Jeppson, Christer Svensson · Journal of Applied Physics · 1977 · 678 citations · Full text

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Theory of hydrogen diffusion and reactions in crystalline silicon

Chris G. Van de Walle, P. J. H. Denteneer, Yaneer Bar-Yam et al. · Physical review. B, Condensed matter · 1989 · 519 citations · Full text

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Fabrication and analysis of deep submicron strained-Si n-MOSFET's

K. Rim, Judy L. Hoyt, J. F. Gibbons · IEEE Transactions on Electron Devices · 2000 · 361 citations

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