Effective optimization of surface passivation on porous silicon carbide using atomic layer deposited Al₂O₃

Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells

G. Dingemans, W. M. M. Kessels · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2012 · 771 citations · Full text

Aluminium Nitride, Ultrathin Al2o3 Films, Engineering +21

On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3

Bram Hoex, J. J. H. Gielis, M. C. M. van de Sanden et al. · Journal of Applied Physics · 2008 · 528 citations · Full text

Engineering, Optoelectronic Devices, Silicon On Insulator +16

Al3O3 thin film growth on Si(100) using binary reaction sequence chemistry

A. W. Ott, J. W. Klaus, J. M. Johnson et al. · Thin Solid Films · 1997 · 508 citations

Materials Science, Aluminium Nitride, Chemical Engineering +8

Surface chemistry of Al2O3 deposition using Al(CH3)3 and H2O in a binary reaction sequence

Anne C. Dillon, A. W. Ott, J. Douglas Way et al. · Surface Science · 1995 · 458 citations

Materials Science, Aluminium Nitride, Chemical Engineering +12

Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge

G. Agostinelli, A. Delabie, P. Vitanov et al. · Solar Energy Materials and Solar Cells · 2006 · 432 citations

Electrical Engineering, Wafer Scale Processing, Engineering +8