Very-fast transmission line pulsing of integrated structures and the charged device model

Abstract

Transmission line pulsing (TLP) is well-established for the IV-characterization of ESD-protection elements. There still is a significant gap between the performance of present TLP-systems and the demands of the Charged Device Model (CDM). A very-fast, narrow-pulse (>3.5 ns), high-current TLP (VF-TLP) is designed to reduce this gap. It is feasible to study the pulsed breakdown of gate oxides and to determine at least the quasi-static IV-characteristics of input structures. Gate oxide breakdown is monitored within the first 6 ns of stress. Correlation with nn-CDM tests is achieved in terms of the failure signature. However, the failure thresholds of VF-TLP and nn-CDM do not correlate.