2004 · 73 citations · 6 references
EngineeringComputer EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice CharacterizationDevice ReliabilityDevice ScalingEmbedded Memory BlocksIntegrated Circuit DesignMemory DevicesEnduranceFin Field-effect Transistor ScalingFin Field-effect TransistorsFlash MemoryFlash Memory DevicesFully Depleted Silicon-on-insulator ScalingFully Depleted Silicon-on-insulator TransistorsSilicon-on-insulator Technology
FD-SOI (fully depleted silicon-on-insulator) FinFET SONOS flash memory devices are investigated for the first time, and they are found to be scalable to a gate length of 40 nm. Although the FinFET SONOS device does not have a body contact, excellent program/erase characteristics are achieved, together with high endurance, long retention time and low reading disturbance. Devices fabricated on [100] and [110] silicon surfaces are compared.
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FinFET scaling to 10 nm gate length
Bin Yu, Leland Chang, Safayet Ahmed et al. · 2003 · 595 citations
Design and scaling of a SONOS multidielectric device for nonvolatile memory applications
M. French, Chun-Yu Chen, Harikaran Sathianathan et al. · IEEE Transactions on Components Packaging and Manufacturing Technology Part A · 1994 · 50 citations
Engineering, Computer Engineering, Electrical Engineering +17