FinFET process refinements for improved mobility and gate work function engineering

Abstract

Process refinements to improve the performance of FinFETs are described. Hydrogen annealing is shown to provide high surface quality on etched fin sidewalls for improved drive current and noise performance. Appropriate V/sub t/ is achieved in lightly doped p-channel FinFETs using Molybdenum (Mo) as the gate-electrode material for the first time. Multiple values of V/sub t/ are achieved via gate work function engineering by selective implantation of Mo.