Very high frequency plasma reactant for atomic layer deposition

Alternative dielectrics to silicon dioxide for memory and logic devices

Angus I. Kingon, Jon‐Paul Maria, S. K. Streiffer · Nature · 2000 · 1.3K citations

Engineering, Materials Engineering, Materials Science +14

Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

M. L. Green, E. P. Gusev, R. Degraeve et al. · Journal of Applied Physics · 2001 · 772 citations

Engineering, Materials Engineering, Materials Science +17

Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3

Bram Hoex, S. B. S. Heil, E. Langereis et al. · Applied Physics Letters · 2006 · 720 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Atomic layer deposition of metal and nitride thin films: Current research efforts and applications for semiconductor device processing

H. Kim · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2003 · 541 citations

Natural Sciences, Materials Engineering, Materials Science +17

Atomic Layer Deposition of Oxide Thin Films with Metal Alkoxides as Oxygen Sources

Mikko Ritala, Kaupo Kukli, Antti Rahtu et al. · Science · 2000 · 483 citations

Natural Sciences, Materials Engineering, Materials Science +17