MRS Proceedings · 1997 · 15 citations · 10 references
EngineeringMaterials SciencePhysicsElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsQuantum WellsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsSemiconductor Thin FilmsWide-bandgap SemiconductorsGallium Nitride (Gan) MaterialsQuantum Well GrowthQuantum Well HeterostructuresQuantum Well StructuresStrained Quantum Wells
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Solid phase immiscibility in GaInN
I. H. Ho, G. B. Stringfellow · Applied Physics Letters · 1996 · 1K citations
Luminescences from localized states in InGaN epilayers
Shigefusa F. Chichibu, T. Azuhata, T. Sota et al. · Applied Physics Letters · 1997 · 405 citations
Growth and characterization of bulk InGaN films and quantum wells
S. Keller, B.P. Keller, D. Kapolnek et al. · Applied Physics Letters · 1996 · 160 citations