A Comparison of Single-Event Transients in Pristine and Irradiated <formula formulatype="inline"><tex Notation="TeX">${{\rm Al}_{0.3}}{{\rm Ga}_{0.7}}{{\rm N}/{\rm GaN}}$</tex> </formula> HEMTs using Two-Photon Absorption and Heavy Ions

Abstract

Single-event transients (SETs) were investigated in Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.3</sub> Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.7</sub> N/GaN high-electron-mobility transistors (HEMTs) using optical excitation via two-photon absorption and by heavy ions. The amplitudes and widths of the SETs were found to depend on a number of different factors, including bias conditions, strike location, and material quality.