MBE grown high κ dielectrics Ga2O3(Gd2O3) on GaN

Effect of temperature on Ga2O3(Gd2O3)/GaN metal–oxide–semiconductor field-effect transistors

F. Ren, M. Hong, S. N. G. Chu et al. · Applied Physics Letters · 1998 · 217 citations

Engineering, Electrical Engineering, Materials Science +17

MgO /p- GaN enhancement mode metal-oxide semiconductor field-effect transistors

Yoshihiro Irokawa, Yoshitaka Nakano, M. Ishiko et al. · Applied Physics Letters · 2004 · 115 citations

Engineering, Electrical Engineering, Materials Engineering +17

Energy-band parameters at the GaAs– and GaN–Ga2O3(Gd2O3) interfaces

T. S. Lay, M. Hong, J. Kwo et al. · Solid-State Electronics · 2001 · 85 citations

Engineering, Materials Engineering, Materials Science +12

Initial growth of Ga2O3(Gd2O3) on GaAs: Key to the attainment of a low interfacial density of states

M. Hong, Zheng‐Hong Lu, J. Kwo et al. · Applied Physics Letters · 2000 · 80 citations

Engineering, Materials Engineering, Materials Science +17

Inversion behavior in Sc2O3/GaN gated diodes

Jihyun Kim, R. Mehandru, B. Luo et al. · Applied Physics Letters · 2002 · 72 citations

Engineering, Electrical Engineering, Materials Science +17