T. S. Lay

Properties of high κ gate dielectrics Gd2O3 and Y2O3 for Si

J. Kwo, M. Hong, A. R. Kortan et al. · Journal of Applied Physics · 2001 · 262 citations

Engineering, Materials Engineering, Materials Science +17

Atomic-layer-deposited HfO2 on In0.53Ga0.47As: Passivation and energy-band parameters

Y. C. Chang, Mao Lin Huang, K. Y. Lee et al. · Applied Physics Letters · 2008 · 112 citations

Natural Sciences, Materials Engineering, Materials Science +17

Energy-band parameters at the GaAs– and GaN–Ga2O3(Gd2O3) interfaces

T. S. Lay, M. Hong, J. Kwo et al. · Solid-State Electronics · 2001 · 85 citations

Engineering, Materials Engineering, Materials Science +12

Properties of Ga2O3(Gd2O3)/GaN metal–insulator–semiconductor diodes

M. Hong, K.A. Anselm, J. Kwo et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2000 · 63 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Anomalous temperature dependence of the correlated ν=1 quantum Hall effect in bilayer electron systems

T. S. Lay, Y. W. Suen, Hari C. Manoharan et al. · Physical review. B, Condensed matter · 1994 · 54 citations

Natural Sciences, Physics, Condensed Matter Physics +16