Properties of Ga2O3(Gd2O3)/GaN metal–insulator–semiconductor diodes

Abstract

Ga 2 O 3 ( Gd 2 O 3 ), electron beam evaporated from a single crystal Ga5Gd3O12 garnet, was ex situ deposited on molecular beam epitaxy grown GaN of Ga-polar surface. Using capacitance–voltage measurement, accumulation and depletion behavior was observed in the Ga2O3(Gd2O3)/GaN metal–oxide–semiconductor diodes, with an interfacial density of states less than 1011 cm−2 eV−1. The Ga2O3(Gd2O3)/GaN interface remains intact with the samples subject to rapid-thermal annealing up to 950 °C, as studied from x-ray reflectivity measurements.