Applied Physics Letters · 2002 · 72 citations · 34 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationIii-v SemiconductorsSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor PhysicsSurface ChargeCapacitanceCapacitance-voltage CharacteristicsCapacitance-voltage CharacterizationCapacitance-voltage MeasurementsCharge InversionGallium Nitride (Gan) MaterialsGate Oxide InterfacesSurface States
The capacitance–voltage (C–V) characteristics of Sc2O3/p-GaN gate-controlled diodes show unusual hook shapes due to the charging of surface states. From the drain–voltage dependence of the C–V curves, the total surface state density was estimated to be ∼8.2×1012 cm−2 for diodes undergoing an implant activation anneal at 950 °C. The accumulation capacitance showed a significant dependence on measurement frequency and is suggested to result from the presence of an interfacial dielectric between the Sc2O3 and GaN. The Si-implanted n+ regions in the gated diode structure are effective in providing a source of inversion charge.
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Undoped AlGaN/GaN HEMTs for microwave power amplification
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AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor
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