A. H. Onstine

Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors

B. Luo, J. W. Johnson, Jong Su KIM et al. · Applied Physics Letters · 2002 · 174 citations

Engineering, Electrical Engineering, Materials Science +17

AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation

R. Mehandru, B. Luo, J. Kim et al. · Applied Physics Letters · 2003 · 141 citations

Engineering, Electrical Engineering, Materials Science +17

MgO /p- GaN enhancement mode metal-oxide semiconductor field-effect transistors

Yoshihiro Irokawa, Yoshitaka Nakano, M. Ishiko et al. · Applied Physics Letters · 2004 · 115 citations

Engineering, Electrical Engineering, Materials Engineering +17

Characteristics of MgO/GaN gate-controlled metal–oxide– semiconductor diodes

Jihyun Kim, R. Mehandru, B. Luo et al. · Applied Physics Letters · 2002 · 98 citations

Engineering, Materials Engineering, Materials Science +17

Gadolinium Oxide and Scandium Oxide: Gate Dielectrics for GaN MOSFETs

J. W. Johnson, R. Mehandru, B. Luo et al. · physica status solidi (a) · 2001 · 87 citations · Full text

Engineering, Materials Engineering, Materials Science +17