From SOI materials to innovative devices

Dynamic threshold-voltage MOSFET (DTMOS) for ultra-low voltage VLSI

F. Assaderaghi, D. Sinitsky, S. Parke et al. · IEEE Transactions on Electron Devices · 1997 · 436 citations

Engineering, Computer Engineering, Electrical Engineering +15

Sub 50-nm FinFET: PMOS

Xuejue Huang, Wen‐Chin Lee, C. Kuo et al. · 2003 · 369 citations

Engineering, Electrical Engineering, Microelectronics +16

Self-aligned (top and bottom) double-gate MOSFET with a 25 nm thick silicon channel

H.‐S. Philip Wong, K. Chan · 2002 · 249 citations

Engineering, Electrical Engineering, Materials Science +17

Impact of the vertical SOI 'DELTA' structure on planar device technology

Digh Hisamoto, T. Kaga, Eiji Takeda · IEEE Transactions on Electron Devices · 1991 · 149 citations

Engineering, Electrical Engineering, Materials Science +17

Three-terminal silicon surface junction tunneling device for room temperature operation

J. Koga, Akira Toriumi · IEEE Electron Device Letters · 1999 · 70 citations

Engineering, Electrical Engineering, Materials Science +16