N. Hefyene

Investigations and Physical Modelling of Saturation Effects in Lateral DMOS Transistor Architectures Based on the Concept of Intrinsic Drain Voltage

C. Anghel, N. Hefyene, A. M. Ionescu et al. · 2001 · 30 citations

Device Modeling, Electrical Engineering, Physical Modelling +8

From SOI materials to innovative devices

F. Allibert, T. Ernst, J. Pretet et al. · Solid-State Electronics · 2001 · 27 citations

Materials Science, Soi Materials, Miniaturization +5

Bias-dependent drift resistance modeling for accurate DC and AC simulation of asymmetric HV-MOSFET

N. Hefyene, E. Vestiel, Benoit Bakeroot et al. · 2003 · 26 citations · Full text

Drain Biases, Engineering, Vlsi Design +17

Ultimately thin SOI MOSFETs: special characteristics and mechanisms

T. Ernst, Daniela Munteanu, S. Cristoloveanu et al. · 2003 · 21 citations

Materials Engineering, Materials Science, Electrical Engineering +14

Adaptation of the pseudo-MOS transistor for the characterization of silicon-on-sapphire films

N. Hefyene, S. Cristoloveanu, G. Ghibaudo et al. · Solid-State Electronics · 2000 · 19 citations

Pseudo-mos Transistor, Electrical Engineering, Engineering +9