N. Hefyene

Investigations and Physical Modelling of Saturation Effects in Lateral DMOS Transistor Architectures Based on the Concept of Intrinsic Drain Voltage

C. Anghel, N. Hefyene, A. M. Ionescu et al. · 2001 · 30 citations

Engineering, Computer Engineering, Electrical Engineering +17

From SOI materials to innovative devices

F. Allibert, T. Ernst, J. Pretet et al. · Solid-State Electronics · 2001 · 27 citations

Natural Sciences, Materials Engineering, Materials Science +10

Bias-dependent drift resistance modeling for accurate DC and AC simulation of asymmetric HV-MOSFET

N. Hefyene, E. Vestiel, Benoit Bakeroot et al. · 2003 · 26 citations · Full text

Engineering, Electrical Engineering, Circuit Theory +16

Ultimately thin SOI MOSFETs: special characteristics and mechanisms

T. Ernst, Daniela Munteanu, S. Cristoloveanu et al. · 2003 · 21 citations

Engineering, Electrical Engineering, Materials Science +17

Adaptation of the pseudo-MOS transistor for the characterization of silicon-on-sapphire films

N. Hefyene, S. Cristoloveanu, G. Ghibaudo et al. · Solid-State Electronics · 2000 · 19 citations

Engineering, Electrical Engineering, Materials Science +14