F. Allibert

Germanium-on-insulator (GeOI) substrates—A novel engineered substrate for future high performance devices

T. Akatsu, C. Deguet, Loïc Sanchez et al. · Materials Science in Semiconductor Processing · 2006 · 128 citations

Electronic Devices, Engineering, Electronic Engineering +5

High performance UTBB FDSOI devices featuring 20nm gate length for 14nm node and beyond

Qianlong Liu, M. Vinet, J. Gimbert et al. · 2013 · 96 citations

Semiconductor Technology, Electrical Engineering, Gate Length +15

High performance extremely thin SOI (ETSOI) hybrid CMOS with Si channel NFET and strained SiGe channel PFET

K. Cheng, A. Khakifirooz, N. Loubet et al. · 2012 · 74 citations

Fabrication and characterisation of 200 mm germanium-on-insulator (GeOI) substrates made from bulk germanium

C. Deguet, L. Sanchez, T. Akatsu et al. · Electronics Letters · 2006 · 65 citations

Engineering, Silicon On Insulator, Rf Semiconductor +16

Impact of free-surface passivation on silicon on insulator buried interface properties by pseudotransistor characterization

G. Hamaide, F. Allibert, H.J. Hovel et al. · Journal of Applied Physics · 2007 · 61 citations

Engineering, Free-surface Passivation, Silicon On Insulator +19