Fabrication and characterisation of 200 mm germanium-on-insulator (GeOI) substrates made from bulk germanium

Abstract

The formation and detailed characterisations of a 200 mm germanium-on-insulator substrate made from germanium bulk material as donor wafer using the Smart CutTM technology is reported. Detailed characterisations of final GeOI structures are presented: final roughness, defectivity evaluation, thickness measurement, and electrical characterisation.