C. Anghel

Self-Heating Characterization and Extraction Method for Thermal Resistance and Capacitance in HV MOSFETs

C. Anghel · IEEE Electron Device Letters · 2004 · 87 citations · Full text

Engineering, Power Electronics, High Voltage Engineering +21

Investigations and Physical Modelling of Saturation Effects in Lateral DMOS Transistor Architectures Based on the Concept of Intrinsic Drain Voltage

C. Anghel, N. Hefyene, A. M. Ionescu et al. · 2001 · 30 citations

Device Modeling, Electrical Engineering, Physical Modelling +8

Bias-dependent drift resistance modeling for accurate DC and AC simulation of asymmetric HV-MOSFET

N. Hefyene, E. Vestiel, Benoit Bakeroot et al. · 2003 · 26 citations · Full text

Drain Biases, Engineering, Vlsi Design +17

A Compact DC and AC Model for Circuit Simulation of High Voltage VDMOS Transistor

Yogesh Singh Chauhan, C. Anghel, F. Krummenacher et al. · 2006 · 20 citations · Full text

Engineering, Vlsi Design, Power Electronic Systems +16

New method for temperature-dependent thermal resistance and capacitance accurate extraction in high-voltage DMOS transistors

C. Anghel, N. Hefyene, Renaud Gillon et al. · 2004 · 16 citations

Device Modeling, Electrical Engineering, Engineering +14