Concepedia

Author

Renaud Gillon

École Polytechnique Fédérale de LausanneORCID

Also Known As

Gillon, R., Gillon, Renaud, R. Gillon, R. Gillonz, Renaud Gillon, Renuad Gillon

160

Publications

1.2K

Citations

16

H-Index

37

Concepts

All Affiliations

École Polytechnique Fédérale de LausanneON Semiconductor (Belgium)UCLouvainGhent UniversityRobert Bosch (Germany)
RG

About

Renaud Gillon is an author at École Polytechnique Fédérale de Lausanne specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Engineering

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2

Electrical Engineering

15

23

633

3

Applied Physics

8

8

210

4

Computer Engineering

4

4

115

5

Education

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Renaud Gillon

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26

Publications

810

Citations

16

H-Index

YearCitations

Accurate SOI MOSFET characterization at microwave frequencies for device performance optimization and analog modeling

Jean‐Pierre Raskin, Renaud Gillon, Jian Chen,

IEEE Transactions on Electron Devices

1998

137

Comparison of TiSi2 , CoSi2, and NiSi for Thin‐Film Silicon‐on‐Insulator Applications

J. Chen, J.P. Colinge, Denis Flandre,

Journal of The Electrochemical Society

1997

106

Fully-Depleted SOI CMOS Technology for Low-Voltage Low-Power Mixed Digital/Analog/Microwave Circuits

Denis Flandre, J.-P. Colinge, J. Chen,

Analog Integrated Circuits and Signal Processing

1999

59

Compact Modeling of Lateral Nonuniform Doping in High-Voltage MOSFETs

Yogesh Singh Chauhan, Fran�ois Krummenacher, Renaud Gillon,

IEEE Transactions on Electron Devices

2007

53

Direct extraction of the series equivalent circuit parameters for the small-signal model of SOI MOSFETs

Jean‐Pierre Raskin, G. Dambrine, Renaud Gillon

IEEE Microwave and Guided Wave Letters

1997

52

Scalable general high voltage MOSFET model including quasi-saturation and self-heating effects

Yogesh Singh Chauhan, Costin Anghel, F. Krummenacher,

Solid-State Electronics

2006

46

Characterizing the TEM Cell Electric and Magnetic Field Coupling to PCB Transmission Lines

Tvrtko Mandić, Renaud Gillon, Bart Nauwelaers,

IEEE Transactions on Electromagnetic Compatibility

2012

39

Investigations and Physical Modelling of Saturation Effects in Lateral DMOS Transistor Architectures Based on the Concept of Intrinsic Drain Voltage

C. Anghel, N. Hefyene, A. M. Ionescu,

2001

30

An EKV-based high voltage MOSFET model with improved mobility and drift model

Yogesh Singh Chauhan, Renaud Gillon, Benoit Bakeroot,

Solid-State Electronics

2007

26

Bias-dependent drift resistance modeling for accurate DC and AC simulation of asymmetric HV-MOSFET

N. Hefyene, E. Vestiel, Benoit Bakeroot,

2003

26

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