Publication | Closed Access

Investigations and Physical Modelling of Saturation Effects in Lateral DMOS Transistor Architectures Based on the Concept of Intrinsic Drain Voltage

Device ModelingElectrical EngineeringPhysical ModellingEngineeringSemiconductor DeviceBias Temperature InstabilityApplied PhysicsSaturation EffectsIntrinsic Drain VoltageMicroelectronicsCircuit Simulation