IEEE Transactions on Electron Devices · 1991 · 149 citations · 13 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice ModelingMetal-oxide-semiconductor Field-effect TransistorsSemiconductor PhysicsSemiconductor Thin FilmsShort-channel EffectsThin-film TransistorsChannel EngineeringCrystalline SiliconCrystalline StructureFully Depleted Silicon-on-insulator TransistorsOxidationSelective OxidationSilicon-on-insulator TechnologySubthreshold Swing
A fully depleted lean channel transistor (DELTA) with its gate incorporated into a new vertical ultrathin silicon-on-insulator (SOI) structure is presented. In the deep-submicrometer region, selective oxidation produces and isolates an ultrathin SOI MOSFET that has high crystalline quality, as good as that of conventional bulk single-crystal devices. Experiments and three-dimensional simulations have shown that this new gate structure has effective channel control and that the vertical ultrathin SOI structure provides superior device characteristics: reduction in short-channel effects, minimized subthreshold swing, and high transconductance.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
13
The Physics of Semiconductor Devices
Andrew Grant · Physics Bulletin · 1978 · 795 citations
Subthreshold slope of thin-film SOI MOSFET's
J.-P. Colinge · IEEE Electron Device Letters · 1986 · 272 citations