IEEE Transactions on Electron Devices · 1988 · 12 citations · 7 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice ReliabilityMetal-oxide-semiconductor Field-effect TransistorsSemiconductor ReliabilityChannel Doping EffectsHot Carrier InjectionHot-carrier DegradationReliability DegradationReliability Degradation MechanismsSeries ResistanceSource ResistanceThreshold Voltage
The dominant degradation mechanism in n-channel lightly doped drain (LDD) MOSFETs following hot-electron injection is identified. While there is no shift in the threshold voltage or any change in the subthreshold slope (implying no significant interface state generation), the peak value of the transconductance is found to degrade with stress time. This degradation is attributed to the increase in the source-drain series resistance, which is measured as a function of stress time. In addition, it is found that for any stress time, the measured series resistance is a strong function of the gate voltage, implying a modulation of the depletion width in the lightly doped region with change in the gate voltage.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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A new method to determine MOSFET channel length
Jenn-Gang Chern, Po‐Han Chang, R.F. Motta et al. · IEEE Electron Device Letters · 1980 · 312 citations