T. Horiuchi

The impact of bias temperature instability for direct-tunneling ultra-thin gate oxide on MOSFET scaling

N. Kimizuka, T. Yamamoto, Tohru Mogami et al. · 1999 · 208 citations

Engineering, Electrical Engineering, Electronic Materials +16

Mechanical stress effect of etch-stop nitride and its impact on deep submicron transistor design

Seiichi Ito, Hironao Namba, Keiko Yamaguchi et al. · 2002 · 153 citations

Engineering, Electrical Engineering, Materials Science +17

NBTI enhancement by nitrogen incorporation into ultrathin gate oxide for 0.10-μm gate CMOS generation

N. Kimizuka, Keiko Yamaguchi, K. Imai et al. · 2002 · 139 citations

Engineering, Electrical Engineering, Materials Science +17

Thin oxide charging current during plasma etching of aluminum

Hang‐Sik Shin, C.-C. King, T. Horiuchi et al. · IEEE Electron Device Letters · 1991 · 106 citations

Engineering, Electrical Engineering, Physics +16

A 16-Mb 400-MHz loadless CMOS four-transistor SRAM macro

Koichi Takeda, Y. Aimoto, N. Nakamura et al. · IEEE Journal of Solid-State Circuits · 2000 · 66 citations

Engineering, Computer Engineering, Electrical Engineering +17