IEEE Transactions on Electron Devices · 1980 · 175 citations · 2 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesCarrier TransportComplementary Metal-oxide-semiconductor TechnologyDevice CharacterizationDevice ModelingField-effect TransistorsMetal-oxide-semiconductor Field-effect TransistorsExperimental Results InterpretationGate Oxide ScalingGate Oxide Thickness EffectsGate OxidesMetal-oxide-semiconductor Field-effect Transistor ModelingMosfet ModelingSource Resistance
A new method for experimentally deriving the source-and-drain resistance of MOS transistors is presented along with experimental results verifying its accuracy. The method also yields the mobility reduction with high gate-oxide field. The measurements are done on two (or more) MOS transistors which are identical except that their gate lengths differ by a known amount.
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