Limitations of shift-and-ratio based L/sub eff/ extraction techniques for MOS transistors with halo or pocket implants

Abstract

The shift-and-ratio method has been considered as one of the most accurate and consistent techniques for extracting the effective channel-length of the MOS transistor. This method assumes the effective mobility of a long channel and a short channel transistor to be equal. Scaling down the MOS transistor urges the need of including halo (or pocket) implants in the fabrication process. Due to this implant, however, the short channel MOSFET features a degraded effective mobility compared to the long channel reference device. This affects the channel-length extraction and results in unrealistic high values for the extracted effective channel-length for deep submicron transistors with high-dose halo (or pocket) implants.