IEEE Electron Device Letters · 1988 · 11 citations · 7 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsField-effect TransistorsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsBallistic Thermal TransportBallistic TransportCurrent DensityCurrent GainGainGain EnhancementHeterojunction DevicesMolecular Beam Epitaxy
The bipolar inversion-channel field-effect transistor (BICFET) relies on a field-effect mechanism to induce and modulate an inversion layer placed at the heterojunction interface. The device was fabricated using molecular beam epitaxy. A current gain of approximately 15 has been achieved at a current density J of approximately 8*10/sup 3/ A/cm/sup 2/ at 300 K. At 77 K, the gain rises to 40 with J=2*10/sup 4/ A/cm/sup 2/. This gain, which follows theoretical predictions, continuously increases with collector current and is limited only by the amount of heat generated in a large-area device. Because of its potential for ballistic transport in the collector, the InGaAs/InAlAs BICFET should be very attractive for high-speed applications.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
7
R. People, K. W. Wecht, K. Alavi et al. · Applied Physics Letters · 1983 · 240 citations
J. M. Kuo, B. Lalevic, T. Y. Chang · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1987 · 20 citations