K.C. Wang - Concepedia

Author

K.C. Wang

Rockwell Automation (United States)

Also Known As

K.C. WANG, K.C. Wang

Publications

526

Citations

H-Index

Concepts

All Affiliations

Rockwell Automation (United States)IBM (United States)University of California San Diego

About

K.C. Wang is an author at Rockwell Automation (United States) specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	12	414
2	Electrical Engineering	10	11	400
3	Applied Physics	6	6	294
4	Computer Engineering	4	4	78
5	Materials Engineering	1	1	19

K.C. Wang

Publications

434

Citations

H-Index

Page 1

	Year	Citations
AlGaAs/GaAs heterojunction bipolar transistors fabricated using a self-aligned dual-lift-off process Mau-Chung Frank Chang, P.M. Asbeck, K.C. Wang, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringSimple Dual-lift-off MethodHigh-frequency Device	1987	107
Determination of junction temperature in AlGaAs/GaAs heterojunction bipolar transistors by electrical measurement J. R. Waldrop, K.C. Wang, P.M. Asbeck IEEE Transactions on Electron Devices SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	1992	67
GaAs/(GaAl)As heterojunction bipolar transistors using a self-aligned substitutional emitter process Mau-Chung Frank Chang, P.M. Asbeck, Debra L. Miller, IEEE Electron Device Letters Electrical EngineeringElectronic DevicesEngineeringHigh-speed ElectronicsIon Implantation	1986	56
A high-speed, low-power divide-by-4 frequency divider implemented with AlInAs/GaInAs HBT's C. W. Farley, K.C. Wang, Mau-Chung Frank Chang, IEEE Electron Device Letters Low-power ElectronicsElectrical EngineeringEngineeringHigh-speed ElectronicsAlinas/gainas Hbt	1989	37
A 20-GHz frequency divider implemented with heterojunction bipolar transistors K.C. Wang, P.M. Asbeck, Mau-Chung Frank Chang, IEEE Electron Device Letters Electrical EngineeringEngineeringRadio FrequencyRf SemiconductorHigh-frequency Device	1987	35
High power GaAlAs/GaAs HBTs for microwave applications N.H. Sheng, Mau-Chung Frank Chang, P.M. Asbeck, Electrical EngineeringEngineeringRf SemiconductorHigh-frequency DeviceElectronic Engineering	1987	29
AlGaAs/InGaAs/GaAs strained-layer heterojunction bipolar transistors by molecular beam epitaxy G.J. Sullivan, P.M. Asbeck, Mau-Chung Frank Chang, Electronics Letters Materials EngineeringAluminium NitrideElectrical EngineeringFirst Algaas/ingaas/gaas HbtsEngineering	1986	19
High speed 8:1 multiplexer and 1:8 demultiplexer implanted with AlGaAs/GaAs HBTs R.B. Nubling, Jin Yu, K.C. Wang, EngineeringIntegrated CircuitsAlgaas/gaas HbtsHigh Speed 8:1Semiconductor Device	2002	16
HBT transmitter and data regenerator arrays for WDM optical communications application Kenneth D. Pedrotti, F. Zucca, P.J. Zampardi, IEEE Journal of Solid-State Circuits Algaas-gaas Hbt-based CircuitsEngineeringOptical Transmission SystemLaser ApplicationsClock Recovery Array	1995	14
25 GHz HBT frequency dividers R.B. Nubling, N.H. Sheng, K.C. Wang, Microwave CircuitsElectrical EngineeringMillimeter Wave TechnologyEngineeringRf Semiconductor	2003	13

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