C. W. Farley - Concepedia

Author

C. W. Farley

Rockwell Automation (United States)

Also Known As

C. Farley, C. Farley III, C. W. FARLEY, C. W. Farley, C.W. Farley, Craig W. Farley

Publications

779

Citations

H-Index

Concepts

All Affiliations

Rockwell Automation (United States)The University of Texas at Austin California State University, Northridge

About

C. W. Farley is an author at Rockwell Automation (United States) specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	22	654
2	Applied Physics	14	16	482
3	Natural Sciences	2	2	89
4	Medicine	1	1	27
5	Biochemistry	1	1	27

C. W. Farley

Publications

675

Citations

H-Index

Page 1

	Year	Citations
LWIR 128*128 GaAs/AlGaAs multiple quantum well hybrid focal plane array Lester J. Kozlowski, Gail Williams, Gerard Sullivan, IEEE Transactions on Electron Devices PhotonicsOptical MaterialsGaas/algaas Multiple QuantumEngineeringPhotodetectors	1991	132
An experimental estimate of Europa's “ocean” composition independent of Galileo orbital remote sensing F. P. Fanale, Yuanhui Li, E. De Carlo, Journal of Geophysical Research Atmospheres EngineeringOuter PlanetChemical CompositionPlanetary GeologyResidual Brines	2001	66
Measurement of InP/In0.53Ga0.47As and In0.53Ga0.47As/In0.52Al0.48As heterojunction band offsets by x-ray photoemission spectroscopy J. R. Waldrop, E. A. Kraut, C. W. Farley, Journal of Applied Physics X-ray SpectroscopyEngineeringElectronic StructureSemiconductorsIi-vi Semiconductor	1991	64
Excess tunnel currents in AlGaAs/GaAs multiple quantum well infrared detectors Gail Williams, R. E. DeWames, C. W. Farley, Applied Physics Letters Excess Tunnel CurrentsPhotonicsElectrical EngineeringWide-bandgap SemiconductorEngineering	1992	44
A high-speed, low-power divide-by-4 frequency divider implemented with AlInAs/GaInAs HBT's C. W. Farley, K.C. Wang, Mau-Chung Frank Chang, IEEE Electron Device Letters Low-power ElectronicsElectrical EngineeringEngineeringHigh-speed ElectronicsAlinas/gainas Hbt	1989	37
Electron Paramagnetic Resonance and Small-Angle Neutron Scattering Studies of Mixed Sodium Dodecyl Sulfate and (Tetradecylmalono)bis(<i>N</i>-methylglucamide) Surfactant Micelles Peter C. Griffiths, A. Y. F. Cheung, G. J. Finney, Langmuir EngineeringMagnetic ResonanceSurfactant MicellesChemistrySugar Surfactant	2002	27
Co-Implantation and autocompensation in close contact rapid thermal annealing of Si-implanted GaAs:Cr C. W. Farley, T. S. Kim, B. G. Streetman Journal of Electronic Materials Materials ScienceSi-implanted GaasEngineeringApplied PhysicsSemiconductor Material	1987	25
Measurement of AlAs/InP and InP/In0.52Al0.48As heterojunction band offsets by x-ray photoemission spectroscopy J. R. Waldrop, E. A. Kraut, C. W. Farley, Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena X-ray SpectroscopyEngineeringValence Band OffsetsElectronic StructureSpectroscopic Property	1990	25
InP/InGaAs double heterojunction bipolar transistors incorporating carbon-doped bases and superlattice graded base-collector junctions Russell C. Gee, P.M. Asbeck, Chia‐Liang Lin, Electronics Letters SemiconductorsDopant SourceElectrical EngineeringElectronic DevicesCarbon-doped Bases	1993	23
Monolithic ultrahigh-speed GaAs HBT optical integrated receivers Kenneth D. Pedrotti, N.H. Sheng, R.L. Pierson, Optical MaterialsEngineeringOptical Transmission SystemOptoelectronic DevicesIntegrated Circuits	2002	23

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