2009 · 21 citations · 7 references
EngineeringComputer EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyDevice ModelingDevice SimulationMetal-oxide-semiconductor Field-effect TransistorsSemiconductor InterfacesComplementary Metal-oxide-semiconductor SimulationDevice Mismatch AnalysisDevice VariabilityDrift-diffusion ModelingDrift-diffusion SimulationInterface StatesMetal-oxide-semiconductor Field-effect Transistor ModelingRandom Dopant Fluctuation
Based on modified 2-D drift-diffusion device simulations, mismatch signatures and principal component analysis, this study proves that random interface states fluctuating in terms of density, position and energy levels, in addition to random dopant fluctuations are required for proper interpretation of drain current mismatch in contemporary CMOS technologies.
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A Tutorial on Principal Component Analysis
Jonathon Shlens · arXiv (Cornell University) · 2014 · 2.3K citations · Full text