Barrier capability of TaNx films deposited by different nitrogen flow rate against Cu diffusion in Cu/TaNx/n+–p junction diodes

Multilevel interconnections for ULSI and GSI era

S. P. Murarka · Materials Science and Engineering R Reports · 1997 · 349 citations

Electrical Engineering, Engineering, Computer Engineering +9

Comparative study of tantalum and tantalum nitrides (Ta2N and TaN) as a diffusion barrier for Cu metallization

Kyung-Hoon Min, Kyu-Chang Chun, Ki‐Bum Kim · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1996 · 259 citations

Engineering, Thin Film Process Technology, Chemical Deposition +23

Copper metallization for ULSL and beyond

S. P. Murarka, Steven W. Hymes · Critical reviews in solid state and materials sciences/CRC critical reviews in solid state and materials sciences · 1995 · 259 citations

Diffusion barrier property of TaN between Si and Cu

Takeo Oku, Eiji Kawakami, Masaki Uekubo et al. · Applied Surface Science · 1996 · 240 citations

Diffusion Barrier Property, Engineering, Physics +5

Tantalum-based diffusion barriers in Si/Cu VLSI metallizations

E. Kolawa, Jen‐Sue Chen, J.S. Reid et al. · Journal of Applied Physics · 1991 · 222 citations · Full text

Materials Engineering, Materials Science, Electrical Engineering +15