IEEE Transactions on Electron Devices · 1993 · 20 citations · 19 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCarrier TransportComplementary Metal-oxide-semiconductor TechnologyDevice ReliabilityMetal-oxide-semiconductor Field-effect TransistorsOxide SemiconductorsSemiconductor ReliabilityDeep DepletionGate LeakageGate Leakage CurrentGate Oxide DegradationGate-induced Drain LeakageHot Carrier InjectionHot-carrier DegradationNitridation
The significant off-stage gate current of nitrided-oxide n-MOSFETs can be attributed to severe hot-hole injection into the gate oxide during band-to-band (B-B) tunneling due to a nitridation-induced lowering of the barrier height for hole injection. Some of the injected holes are even trapped in the gate oxide above the deep-depletion layer of the drain and thus decrease the gate-induced drain leakage (GIDL) current. A subsequent hot-electron injection into the gate oxide can neutralize these trapped holes and make the reduced GIDL current recover, even increase beyond the original value. The proposed mechanism of the GIDL degradation and recovery behaviors can be confirmed by the observed change in the ratio of the substrate to source currents, as well as by the field-distribution analysis of the gate oxide under stressing.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
19
The impact of gate-induced drain leakage current on MOSFET scaling
Subbreakdown drain leakage current in MOSFET
J. Chen, T.Y. Chan, I.C. Chen et al. · IEEE Electron Device Letters · 1987 · 301 citations