Annealing temperature dependency of the electrical and microstructural properties of Ti and Pt contacts to n-type Ge substrates

Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors

Minjoo Larry Lee, Eugene A. Fitzgerald, Mayank T. Bulsara et al. · Journal of Applied Physics · 2004 · 957 citations

Engineering, Electrical Engineering, Materials Science +17

Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface

Tomonori Nishimura, Koji Kita, Akira Toriumi · Applied Physics Letters · 2007 · 491 citations

Natural Sciences, Materials Engineering, Materials Science +17

Fermi level depinning in metal/Ge Schottky junction for metal source/drain Ge metal-oxide-semiconductor field-effect-transistor application

Masaharu Kobayashi, Atsuhiro Kinoshita, Krishna C. Saraswat et al. · Journal of Applied Physics · 2009 · 208 citations

Engineering, Electrical Engineering, Materials Science +17

Characterization of nickel Germanide thin films for use as contacts to p-channel Germanium MOSFETs

John Spann, Robert A. Anderson, T. J. Thornton et al. · IEEE Electron Device Letters · 2005 · 76 citations

Engineering, Electrical Engineering, Materials Science +17

Subnanometer-equivalent-oxide-thickness germanium p-metal-oxide-semiconductor field effect transistors fabricated using molecular-beam-deposited high-k/metal gate stack

Andrew Ritenour, A. Khakifirooz, D.A. Antoniadis et al. · Applied Physics Letters · 2006 · 73 citations

Engineering, Electrical Engineering, Materials Science +17