V. Janardhanam

Electrical Properties and Current Transport Mechanisms of the Au/n-GaN Schottky Structure with Solution- Processed High-k BaTiO3 Interlayer

V. Rajagopal Reddy, V. Manjunath, V. Janardhanam et al. · Journal of Electronic Materials · 2014 · 116 citations

Materials Engineering, Materials Science, Electrical Engineering +9

Temperature dependency and carrier transport mechanisms of Ti/p-type InP Schottky rectifiers

V. Janardhanam, Hoon-Ki Lee, Kyu-Hwan Shim et al. · Journal of Alloys and Compounds · 2010 · 87 citations

Materials Science, Electrical Engineering, Engineering +4

Temperature-dependent Schottky barrier parameters of Ni/Au on n-type (001) β-Ga2O3 Schottky barrier diode

P.R. Sekhar Reddy, V. Janardhanam, Kyu-Hwan Shim et al. · Vacuum · 2019 · 86 citations

Materials Science, Semiconductor Technology, Electrical Engineering +5

Study of current–voltage–temperature (I–V–T) and capacitance–voltage–temperature (C–V–T) characteristics of molybdenum Schottky contacts on n-InP (100)

V. Janardhanam, A. Ashok Kumar, V. Rajagopal Reddy et al. · Journal of Alloys and Compounds · 2009 · 79 citations

Materials Science, Semiconductor Technology, Electrical Engineering +7

Structural, Chemical and Electrical Properties of Au/La2O3/n-GaN MIS Junction with a High-k Lanthanum Oxide Insulating Layer

M. Uma, N. Balaram, P.R. Sekhar Reddy et al. · Journal of Electronic Materials · 2019 · 60 citations

Materials Engineering, Materials Science, Electrical Engineering +8