V. Manjunath

Electrical Properties and Current Transport Mechanisms of the Au/n-GaN Schottky Structure with Solution- Processed High-k BaTiO3 Interlayer

V. Rajagopal Reddy, V. Manjunath, V. Janardhanam et al. · Journal of Electronic Materials · 2014 · 120 citations

Engineering, Materials Engineering, Materials Science +17

Electrical and frequency-dependent properties of Au/Sm2O3/n-GaN MIS junction with a high-k rare-earth Sm2O3 as interlayer

V. Manjunath, V. Rajagopal Reddy, P.R. Sekhar Reddy et al. · Current Applied Physics · 2017 · 57 citations

Engineering, Materials Engineering, Materials Science +16

Highly sensitive and cost-effective metal-semiconductor-metal asymmetric type Schottky metallization based ultraviolet photodetecting sensors fabricated on n-type GaN

Nanda Kumar Reddy Nallabala, S.V. Prabhakar Vattikuti, V. K. Verma et al. · Materials Science in Semiconductor Processing · 2021 · 43 citations

Engineering, Electrical Engineering, Materials Science +12

Structural and optical properties, electrochemical impedance spectroscopy, and Mott–Schottky analysis of ZnFe2O4 nanoparticle-decorated V2O5 rectangular nanosheets for photoelectrochemical applications

I. Neelakanta Reddy, V. Manjunath, Jaesool Shim · Journal of environmental chemical engineering · 2021 · 42 citations

Natural Sciences, Materials Engineering, Materials Science +17

Temperature effect and kinetics, <scp>LiZr₂</scp>(<scp>PO₄</scp>)₃ and Li_1.<scp>₂Al₀</scp>_.<scp>₂Zr₁</scp>_.8(<scp>PO₄</scp>)₃ and electrochemical properties for rechargeable ion batteries

Bhargav Akkinepally, I. Neelakanta Reddy, V. Manjunath et al. · International Journal of Energy Research · 2022 · 35 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17