Publication | Closed Access
Electrical Properties and Current Transport Mechanisms of the Au/n-GaN Schottky Structure with Solution- Processed High-k BaTiO3 Interlayer
116
Citations
39
References
2014
Year
Materials EngineeringMaterials ScienceElectrical EngineeringAu/n-gan Schottky StructureEngineeringWide-bandgap SemiconductorNanotechnologyApplied PhysicsAluminum Gallium NitrideHigh-k Batio3 InterlayerGan Power DeviceElectrical Properties
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