Electrochemical and Solid-State Letters · 2006 · 43 citations · 18 references
Natural SciencesMaterials EngineeringMaterials ScienceMaterials ChemistrySemiconductor MaterialsThin FilmsAtomic Layer DepositionDielectricsSemiconductor Device MaterialsSurface PhysicsThin Film Electrical PropertiesThin-film DepositionCurrent DensityEquivalent Oxide ThicknessEtch RateLeakage CurrentPermittivityPrecursor ChemistryReactive Ion EtchingSilicon
films were deposited by atomic layer deposition (ALD) from a new precursor scandium tris(-diisopropylacetamidinate) and water. The precursor is thermally stable , volatile, with good reactivity to HF-last silicon. A growth rate of was obtained at . The films were pure ( atom %) and had a refractive index of 1.8. Reactive ion etching tests on ALD scandia showed an etch rate 18 times slower than ALD hafnia. Electrical measurements showed a high permittivity of , and a leakage current density of for an equivalent oxide thickness of at .
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