Concepedia

Kyoung H. Kim

KH

Statistics

Publications

3

Citations

173

H-Index

3

Active since

2006

Affiliations

Harvard University(Current)

Kyoung H. Kim is an author at Harvard University specializing in semiconductor materials, atomic layer deposition, and equivalent oxide thickness.

Publications per year

2006–2007

3

Publications

3

Atomic layer deposition of insulating nitride interfacial layers for germanium metal oxide semiconductor field effect transistors with high-κ oxide/tungsten nitride gate stacks

Kyoung H. Kim, Roy G. Gordon, Andrew Ritenour et al. · Applied Physics Letters · 2007 · 66 citations

, , +17

Atomic layer deposition of gadolinium scandate films with high dielectric constant and low leakage current

Kyoung H. Kim, Damon B. Farmer, J.‐M. Lehn et al. · Applied Physics Letters · 2006 · 64 citations

, , +17

ALD of Scandium Oxide from Scandium Tris(N,N[sup ʹ]-diisopropylacetamidinate) and Water

Philippe de Rouffignac, Andrew P. Yousef, Kyoung H. Kim et al. · Electrochemical and Solid-State Letters · 2006 · 43 citations

, , +17

1–3 of 3