Concepedia

Single-Event-Upset Critical Charge Measurements and Modeling of 65 nm Silicon-on-Insulator Latches and Memory Cells

David F. Heidel, Kenneth P. Rodbell, Phil Oldiges, Michael S. Gordon, Henry H. K. Tang, Ethan H. Cannon, C. Plettner

IEEE Transactions on Nuclear Science · 2006 · 47 citations · 8 references

Abstract

Experimental and modeling results are presented on the critical charge required to upset exploratory 65 nm silicon-on-insulator (SOI) circuits. Using a mono-energetic, collimated, beam of particles the charge deposition was effectively modulated and modeled

References

8

XXXIX. <i>On the α particles of radium, and their loss of range in passing through various atoms and molecules</i>

William Bragg, Richard Kleeman · The London Edinburgh and Dublin Philosophical Magazine and Journal of Science · 1905 · 783 citations

Experimental Nuclear Physics, Nuclear Physics, Physics +13

Finite-Element Analysis of Semiconductor Devices: The FIELDAY Program

E. M. Buturla, P.E. Cottrell, B.M. Grossman et al. · IBM Journal of Research and Development · 1981 · 305 citations

Numerical Analysis, Engineering, Field-effect Transistors +20

Physics-based simulation of single-event effects

P.E. Dodd · IEEE Transactions on Device and Materials Reliability · 2005 · 149 citations

Engineering, Vlsi Design, Single-event Effects +24

Soft-error Monte Carlo modeling program, SEMM

P. C. Murley, G. R. Srinivasan · IBM Journal of Research and Development · 1996 · 128 citations

Numerical Analysis, Engineering, Nuclear Physics +22

Impacts of front-end and middle-end process modifications on terrestrial soft error rate

P. Roche, Gilles Gasiot · IEEE Transactions on Device and Materials Reliability · 2005 · 91 citations

Engineering, Vlsi Design, Industrial Engineering +16