IEEE Transactions on Nuclear Science · 2010 · 25 citations · 6 references
EngineeringElectrical EngineeringMicroelectronicsPower ElectronicsSemiconductor DevicesCurrent-voltage CharacteristicsDevice CharacterizationDevice ReliabilityHeavy-ion PhysicsRadiation Damage In MaterialsSemiconductor ReliabilityDegradationGate Oxide DegradationHeavy Ion RadiationMicrodose Radiation EffectsPower MosfetsRadiation Damage EffectsRadiation EffectsRadiation Effects On Reliability
It was demonstrated that anomalously large degradation observed in power MOSFETs was caused by a single heavy ion. It was identified as a microdose effect and successfully characterized by several parameters extracted from the experimental data.
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