IEEE Microwave and Guided Wave Letters · 1999 · 50 citations · 7 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesMicrowave AmplifiersPower AmplifiersSemiconductor HeterostructuresSemiconductor PhysicsWide Band Gap SemiconductorsGallium NitrideGallium Nitride (Gan) MaterialsGallium Nitride Power AmplifiersGallium Nitride Power DevicesGan-based High-frequency DevicesHigh-electron-mobility TransistorsPower OutputSmall-signal Gain
We report the first gallium nitride (GaN)-based broad-band power amplifier. The circuit was fabricated on an AlN substrate using AlGaN-GaN power high-electron mobility transistors (HEMTs), grown on sapphire substrates, which were flip-chip bonded for thermal management. The amplifier employed a modified traveling-wave power amplifier (TWPA) topology that eliminated the backward wave of conventional TWPAs. Using four HEMTs each with 0.75-μm gate length and 0.75-mm gate periphery, a small-signal gain of /spl sim/7 dB was obtained with a bandwidth of 1-8 GHz. At mid-band, an output power of 3.6 W was obtained when biased at V/sub ds/=18 V and 4.5 W when biased at V/sub ds/=22 V.
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High-power 10-GHz operation of AlGaN HFET's on insulating SiC
G.J. Sullivan, M.Y. Chen, J.A. Higgins et al. · IEEE Electron Device Letters · 1998 · 122 citations
High performance and large area flip-chip bonded AlGaN/GaN MODFETs
B.J. Thibeault, B.P. Keller, P. Fini et al. · 2002 · 25 citations