IEEE Transactions on Nuclear Science · 2006 · 106 citations · 25 references
Non-volatile MemoryElectrical EngineeringEngineeringNanoelectronicsFlash MemoryApplied PhysicsComputer ArchitectureComputer EngineeringTid CharacterizationMemory DevicesHeavy Ion SeeSemiconductor MemoryMicroelectronicsNand Flash MemoryAdvanced Commercial 2Gbit3D Memory
An advanced commercial 2Gbit NAND flash memory (90 nm technology, one bit/cell) has been characterized for TID and heavy ion SEE. Results are qualitatively similar to previous flash results in most respects, but we also detected a new dynamic failure mode
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R. Bez, E. Camerlenghi, Alberto Modelli et al. · Proceedings of the IEEE · 2003 · 806 citations
Hardware Security, Non-volatile Memory, Electrical Engineering +13
CREME96: A Revision of the Cosmic Ray Effects on Micro-Electronics Code
A. J. Tylka, James H. Adams, P. R. Boberg et al. · IEEE Transactions on Nuclear Science · 1997 · 619 citations