Tim Irwin

SEE and TID Characterization of an Advanced Commercial 2Gbit NAND Flash Nonvolatile Memory

Timothy R. Oldham, Ray Ladbury, M. Friendlich et al. · IEEE Transactions on Nuclear Science · 2006 · 106 citations

Non-volatile Memory, Electrical Engineering, Engineering +13

Heavy-ion broad-beam and microprobe studies of single-event upsets in 0.20-/spl mu/m SiGe heterojunction bipolar transistors and circuits

Robert A. Reed, Paul W. Marshall, J.C. Pickel et al. · IEEE Transactions on Nuclear Science · 2003 · 69 citations

Engineering, Vlsi Design, Single-event Upsets +17

Current single event effects and radiation damage results for candidate spacecraft electronics

Martha V. O'Bryan, Kenneth A. LaBel, Ray Ladbury et al. · 2003 · 58 citations

Electrical Engineering, Total Ionizing Dose, Engineering +14

TID and SEE Response of an Advanced Samsung 4Gb NAND Flash Memory

Timothy R. Oldham, M. Friendlich, James W. Howard et al. · 2007 · 35 citations

Nm Technology, Electrical Engineering, Ion Implantation +15

An Analysis of Single Event Upset Dependencies on High Frequency and Architectural Implementations within Actel RTAX-S Family Field Programmable Gate Arrays

Melanie D. Berg, Jih-Jong Wang, Ray Ladbury et al. · IEEE Transactions on Nuclear Science · 2006 · 35 citations

Engineering, Vlsi Design, Evolvable Hardware +19