Novel dielectrics for gate oxides and surface passivation on GaN

The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs

R. Vetury, N.Q. Zhang, S. Keller et al. · IEEE Transactions on Electron Devices · 2001 · 1.4K citations

Engineering, Electrical Engineering, Materials Science +17

The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs

B.M. Green, K. Chu, Eduardo M. Chumbes et al. · IEEE Electron Device Letters · 2000 · 723 citations

Engineering, Electrical Engineering, Materials Science +17

Trapping effects and microwave power performance in AlGaN/GaN HEMTs

S.C. Binari, K. Ikossi, J.A. Roussos et al. · IEEE Transactions on Electron Devices · 2001 · 638 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Fabrication and performance of GaN electronic devices

S. J. Pearton, F. Ren, A.P. Zhang et al. · Materials Science and Engineering R Reports · 2000 · 498 citations

Engineering, Materials Engineering, Materials Science +12

Undoped AlGaN/GaN HEMTs for microwave power amplification

L.F. Eastman, V. Tilak, J. Smart et al. · IEEE Transactions on Electron Devices · 2001 · 389 citations

Engineering, Electrical Engineering, Materials Science +17